The fundamental parameters of dielectric and semiconductor samples are the
permittivity ε and the tangent of the dielectric loss angle tgδ or the conductivity σ due
to the fact that the numerical value of most of the remaining characteristics of the object
can be judged from the change in these ones. For metals, such parameters are the
magnetic permeability μ and conductivity σ.
Typical conversion characteristics can be seen in Fig. 3.
a)
b)
c)
d)
Figure 3. Dependence of measurement information signals (The resonance
frequency shift (a, c) and quality factor (b, d)) from object parameters
As it can be seen from the figure, the signals of the measuring information have a
sharply nonlinear dependence on the investigated parameters of the object, and a sharp
nonlinearity also appears in the dependence of these signals on the interfering factors
[22]. From Fig. 3a one can see that the dependence of the signal of the resonant
frequency shift at the initial stage has a small quasilinear section, then it is sharply
nonlinear and in the end the dependence goes to saturation. This indicates a drop in
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